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FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT
June 2009
FGH25N120FTDS
1200V, 25A Field Stop Trench IGBT
Features
* High speed switching * Low saturation voltage: VCE(sat) = 1.60V @ IC = 25A * High input impedance * RoHS compliant
tm
General Description
Using advanced field stop trench technology, Fairchild's 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for General Inverter switching applications.
Application
* UPS, Solar Inverter, Welding Machine, General Purpose Inverters
E
C G
C
G
COLLECTOR (FLANGE)
E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25 C @ TC = 100oC
o o
Ratings
1200 25 @ TC = 25 C @ TC = 100oC 50 25 75 @ TC = 100 C
o
Units
V V A A A A A W W
o o o
25 75 313 125 -55 to +150 -55 to +150 300
C C C
Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJC(Diode) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
0.4 1.25 40
Units
o
C/W
oC/W o
C/W
(c)2009 Fairchild Semiconductor Corporation FGH25N120FTDS Rev. A
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FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT
Package Marking and Ordering Information
Device Marking
FGH25N120FTDS
Device
FGH25N120FTDS
Package
TO-3PN
Eco Status
RoHS
Packaging Type
Tube
Qty per Tube
30ea
For Fairchild's definition of "green" Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
1200 -
-
1 250
V mA nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 25mA, VCE = VGE IC = 25A, VGE = 15V IC = 25A, VGE = 15V, TC = 125oC 3.5 6 1.6 1.92 7.5 2 V V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 4090 135 75 pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 600V, IC = 25A, VGE = 15V VCC = 600V, IC = 25A, RG = 10, VGE = 15V, Inductive Load, TC = 125oC VCC = 600V, IC = 25A, RG = 10, VGE = 15V, Inductive Load, TC = 25oC 26 41 151 102 1.42 1.16 2.58 22 41 163 136 2.04 1.58 3.62 169 33 78 35 53 196 132 1.84 1.50 3.34 225 44 104 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
FGH25N120FTDS Rev. A
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FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT
Electrical Characteristics of the Diode
Symbol
VFM trr Irr Qrr
TC = 25C unless otherwise noted
Parameter
Diode Forward Voltage
Test Conditions
IF = 25A TC = 25oC TC = 125oC TC = 25oC TC = 125oC
o
Min.
-
Typ.
2.5 2.3 411 496 5.2 6.9 1.1 1.7
Max
3.5 535 6.8 1.82 -
Units
V
Diode Reverse Recovery Time IES = 25A, Diode Peak Reverse Recovery Current di/dt = 200A/s
ns
TC = 25oC TC = 125 C TC = 25oC TC = 125 C
o
A C
Diode Reverse Recovery Charge
FGH25N120FTDS Rev. A
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FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180 150
Collector Current, IC [A]
17V TC = 25 C 20V 12V
o
Figure 2. Typical Output Characteristics
180 150
Collector Current, IC [A]
17V 15V 12V TC = 125 C
o
20V
15V
120 90
10V
120 90
10V
60
9V
60
9V
30
VGE = 8V
30 0 0
VGE = 8V
0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8
2 4 6 Collector-Emitter Voltage, VCE [V]
8
Figure 3. Typical Saturation Voltage Characteristics
120 100
Collector Current, IC [A]
Common Emitter VGE = 15V TC = 25 C
Figure 4. Transfer Characteristics
120 100
Collector Current, IC [A]
Common Emitter VCE = 20V TC = 25 C TC = 125 C
o o
o
80 60 40 20 0 0
TC = 125 C
o
80 60 40 20 0
2 4 Collector-Emitter Voltage, VCE [V]
6
0
5 10 Gate-Emitter Voltage,VGE [V]
15
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
3.0
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. V GE
20
Common Emitter
Collector-Emitter Voltage, VCE [V]
TC = 25 C
o
2.5
50A
16
12
2.0
25A
8
50A 25A IC = 10A
1.5
IC = 10A
4
1.0 25
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGH25N120FTDS Rev. A
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FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
o
Figure 8. Load Current vs. Frequency
140
VCC = 600V load Current : peak of square wave
Collector-Emitter Voltage, VCE [V]
TC = 125 C
120 Load Current [A] 100 80 60 40
16
12
8
50A 25A IC = 10A
4
Duty cycle : 50%
o 20 TC = 100 C
Powe Dissipation = 125W
1 2 3
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
0 0 10
10 10 Frequency [kHz]
10
Figure 9. Capacitance Characteristics
8000
Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
Figure 10. Gate Charge Characteristics
15
Common Emitter
o
Gate-Emitter Voltage, VGE [V]
TC = 25 C
12
VCC = 200V 600V 400V
6000
Capacitance [pF]
Cies
9
4000
6
2000
Coes
3
Cres
0 1 10 Collector-Emitter Voltage, VCE [V]
30
0 0 40 80 120 160 Gate Charge, Qg [nC] 200
Figure 11. SOA Characteristics Gate Resistance
200 100
10s
Figure 12. Turn-on Characteristics vs. Gate Resistance
200
Collector Current, Ic [A]
100s 1ms 10 ms DC
100
Switching Time [ns]
10
1
tr Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 C TC = 125 C
o o
0.1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
td(on)
0.01 1
10 0 10 20 30 40 50
Gate Resistance, RG []
10 100 1000 3000 Collector-Emitter Voltage, VCE [V]
FGH25N120FTDS Rev. A
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FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Gate Resistance
1000
Figure 14. Turn-on Characteristics vs. Collector Current
100
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Switching Time [ns]
Switching Time [ns]
td(off)
TC = 125 C tr
100
tf Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 C TC = 125 C
o o
td(on)
10 0 10 20 30 Gate Resistance, RG [] 40 50
10 0 10 20 30 40 50
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs. Collector Current
1000
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Figure 16. Switching Loss vs. Gate Resistance
10
Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 C TC = 125 C Eon
o o
tf
100
td(off)
Switching Loss [mJ]
Switching Time [ns]
TC = 125 C
Eoff
20 0 10 20 30 40 Collector Current, IC [A] 50
1
0
10
20 30 40 Gate Resistance, RG []
50
Figure 17. Switching Loss vs. Collector Current
10
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o
Figure 18. Turn off Switing SOA Characteristics
100
Eon
Switching Loss [mJ]
TC = 125 C
o
1
Eoff
Collector Current, IC [A]
10
Safe Operating Area
0.1 0 10 20 30 Collector Current, IC [A] 40 50
1 1
VGE = 15V, TC = 125 C
o
10
100
1000 3000
Collector-Emitter Voltage, VCE [V]
FGH25N120FTDS Rev. A
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FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics
30
Reverse Recovery Currnet, Irr [A]
Figure 20. Reverse Recovery Current
7
10 Forward Current, IF [A]
6
200A/s
TJ = 125 C
o
o
5
1
TJ = 25 C
4
di/dt = 100A/s
TC = 25 C TC = 125 C
o
o
3
0.1 0 1 2 Forward Voltage, VF [V] 3
2 10
20 30 40 Forward Current, IF [A]
50
Figure 21. Stored Charge
2.0
Stored Recovery Charge, Qrr [C]
Figure 22. Reverse Recovery Time
1200
Reverse Recovery Time, trr [ns]
1.5
200A/s
1000
di/dt = 100A/s
1.0
di/dt = 100A/s
800
200A/s
0.5
600
0.0 10
20 30 40 Forward Current, IF [A]
50
400 10
20 30 Forward Current, IF [A]
40
Figure 23. Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.1
0.5 0.2
0.1 0.05 0.01 0.02 0.01 single pulse
PDM t1 t2
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
0.001 1E-5
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGH25N120FTDS Rev. A
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FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
FGH25N120FTDS Rev. A
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FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT
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R ev . I 40
2.
A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
9 FGH25N120FTDS Rev. A
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